NSS30100LT1G PNP Transistor

The NSS30100LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS30100LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS30100LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS30100LT1G transistor as follows.

NSS30100LT1G Transistor Specification

Transistor Code		NSS30100LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Collector Power Dissipation (Maximum)	PC	0.71W
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	2A
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz

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