The NESG3033M14 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NESG3033M14 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NESG3033M14 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the NESG3033M14 transistor as follows.
| Transistor Code | NESG3033M14 | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | ||
| Package | M14 | |
| Transistor SMD Code | zL | |
| Collector Power Dissipation (Maximum) | PC | 0.15W |
| Collector-Base Voltage (Maximum) | VCB | 5V |
| Collector-Emitter Voltage (Maximum) | VCE | 4.3V |
| Collector Current (Maximum) | IC | 0.035A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Forward Current Transfer Ratio (hFE Value) | 220 | |
| Transition Frequency | FT | 23000MHz |
UXPython is not the creator or an official representative of the NESG3033M14 NPN transistor. You can download the official NESG3033M14 NPN transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
NESG4030M14 NPN Transistor
NESG3032M14 NPN Transistor
NESG3031M14 NPN Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.