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NB212XG NPN Transistor

The NB212XG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB212XG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB212XG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB212XG transistor as follows.

Circuit diagram symbol of the NB212XG transistor

NB212XG Transistor Specification

Transistor Code NB212XG
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 55V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 68
Transition Frequency FT 50MHz
Collector Capacitance CC 7pF

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