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NB111EI NPN Transistor

The NB111EI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB111EI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB111EI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB111EI transistor as follows.

Circuit diagram symbol of the NB111EI transistor

NB111EI Transistor Specification

Transistor Code NB111EI
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 35V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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