MRA1000-7 NPN Transistor

The MRA1000-7 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRA1000-7 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRA1000-7 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRA1000-7 transistor as follows.

MRA1000-7 Transistor Specification

Transistor Code		MRA1000-7
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO128
Collector Power Dissipation (Maximum)	PC	7W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	28V
Collector Current (Maximum)	IC	0.02A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	3.5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1000MHz
Collector Capacitance	CC	50pF

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