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MQ5550R NPN Transistor

The MQ5550R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MQ5550R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MQ5550R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MQ5550R transistor as follows.

Circuit diagram symbol of the MQ5550R transistor

MQ5550R Transistor Specification

Transistor Code MQ5550R
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO86
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 140V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 90
Transition Frequency FT 100MHz
Collector Capacitance CC 10pF

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