MPSW45AZL1G NPN Transistor

The MPSW45AZL1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPSW45AZL1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPSW45AZL1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPSW45AZL1G transistor as follows.

MPSW45AZL1G Transistor Specification

Transistor Code		MPSW45AZL1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		25000
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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