MPSA13RLRMG NPN Transistor

The MPSA13RLRMG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPSA13RLRMG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPSA13RLRMG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPSA13RLRMG transistor as follows.

MPSA13RLRMG Transistor Specification

Transistor Code		MPSA13RLRMG
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		10000
Transition Frequency	FT	125MHz

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