MMBTH81LT1 PNP Transistor

The MMBTH81LT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBTH81LT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH81LT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBTH81LT1 transistor as follows.

MMBTH81LT1 Transistor Specification

Transistor Code		MMBTH81LT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		3D
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	600MHz
Collector Capacitance	CC	O.3pF

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