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MMBTH10L NPN Transistor

The MMBTH10L is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTH10L transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH10L transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTH10L transistor as follows.

Circuit diagram symbol of the MMBTH10L transistor

MMBTH10L Transistor Specification

Transistor Code MMBTH10L
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 3EM
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.04A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 650MHz

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