MMBT5770 NPN Transistor

The MMBT5770 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5770 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5770 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5770 transistor as follows.

MMBT5770 Transistor Specification

Transistor Code		MMBT5770
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4.5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	600MHz

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