MMBT5401-G PNP Transistor

The MMBT5401-G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT5401-G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5401-G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT5401-G transistor as follows.

MMBT5401-G Transistor Specification

Transistor Code		MMBT5401-G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		2L
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz

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