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MMBT4140 NPN Transistor

The MMBT4140 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT4140 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT4140 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT4140 transistor as follows.

Circuit diagram symbol of the MMBT4140 transistor

MMBT4140 Transistor Specification

Transistor Code MMBT4140
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 250MHz
Collector Capacitance CC 8pF

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