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MM8012 NPN Transistor

The MM8012 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MM8012 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MM8012 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MM8012 transistor as follows.

Circuit diagram symbol of the MM8012 transistor

MM8012 Transistor Specification

Transistor Code MM8012
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X27
Collector Power Dissipation (Maximum) PC 5W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.4A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 1100MHz
Collector Capacitance CC 4pF

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More Transistors Datasheets in X27 Package

MM8003 MM8003 NPN Transistor