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MJE253G PNP Transistor

The MJE253G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE253G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE253G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE253G transistor as follows.

Circuit diagram symbol of the MJE253G transistor

MJE253G Transistor Specification

Transistor Code MJE253G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO126
Transistor SMD Code JE253
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 40MHz
Collector Capacitance CC 50pF

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