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MJE13003VI1 NPN Transistor

The MJE13003VI1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13003VI1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13003VI1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13003VI1 transistor as follows.

Circuit diagram symbol of the MJE13003VI1 transistor

MJE13003VI1 Transistor Specification

Transistor Code MJE13003VI1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 2.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 4MHz

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