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MJD31T4 NPN Transistor

The MJD31T4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD31T4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD31T4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD31T4 transistor as follows.

Circuit diagram symbol of the MJD31T4 transistor

MJD31T4 Transistor Specification

Transistor Code MJD31T4
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO252
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 3MHz

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