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MJD122-1 NPN Transistor

The MJD122-1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD122-1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD122-1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD122-1 transistor as follows.

Circuit diagram symbol of the MJD122-1 transistor

MJD122-1 Transistor Specification

Transistor Code MJD122-1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO252
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 6000
Transition Frequency FT 4MHz
Collector Capacitance CC 200pF

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