MJ12020 NPN Transistor

The MJ12020 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ12020 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ12020 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ12020 transistor as follows.

MJ12020 Transistor Specification

Transistor Code		MJ12020
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	850V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	15MHz
Collector Capacitance	CC	200pF

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