MJ11022G NPN Transistor

The MJ11022G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ11022G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ11022G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ11022G transistor as follows.

MJ11022G Transistor Specification

Transistor Code		MJ11022G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	50V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	3MHz
Collector Capacitance	CC	400pF

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