MJ11021G PNP Transistor

The MJ11021G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJ11021G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ11021G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJ11021G transistor as follows.

MJ11021G Transistor Specification

Transistor Code		MJ11021G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	175W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	50V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	3MHz
Collector Capacitance	CC	600pF

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