MG6330 NPN Transistor

The MG6330 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MG6330 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MG6330 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MG6330 transistor as follows.

MG6330 Transistor Specification

Transistor Code		MG6330
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-3P
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	230V
Collector-Emitter Voltage (Maximum)	VCE	230V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	60MHz
Collector Capacitance	CC	250pF

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