ME1100 NPN Transistor

The ME1100 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ME1100 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ME1100 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ME1100 transistor as follows.

ME1100 Transistor Specification

Transistor Code		ME1100
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	110V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	165°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	30MHz
Collector Capacitance	CC	8pF

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