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M54566DP NPN Transistor

The M54566DP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the M54566DP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The M54566DP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the M54566DP transistor as follows.

Circuit diagram symbol of the M54566DP transistor

M54566DP Transistor Specification

Transistor Code M54566DP
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 16P2X-B
Collector Power Dissipation (Maximum) PC 1W
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.4A
Operating Junction Temperature (Maximum) TJ 75°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 2000

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More Transistors Datasheets in 16P2X-B Package