The LNST3906F3T5G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LNST3906F3T5G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The LNST3906F3T5G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the LNST3906F3T5G transistor as follows.
| Transistor Code | LNST3906F3T5G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | SOT1123 | |
| Transistor SMD Code | 3 | |
| Collector Power Dissipation (Maximum) | PC | 0.29W |
| Collector-Base Voltage (Maximum) | VCB | 40V |
| Collector-Emitter Voltage (Maximum) | VCE | 40V |
| Collector Current (Maximum) | IC | 0.2A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 5V |
| Forward Current Transfer Ratio (hFE Value) | 100 | |
| Transition Frequency | FT | 250MHz |
| Collector Capacitance | CC | 4.5pF |
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LNST3904F3T5G NPN Transistor
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