LM1090G NPN Transistor

The LM1090G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the LM1090G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LM1090G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the LM1090G transistor as follows.

LM1090G Transistor Specification

Transistor Code		LM1090G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO8
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	75V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		8
Transition Frequency	FT	140MHz
Collector Capacitance	CC	40pF

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