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L8550HQLT1G PNP Transistor

The L8550HQLT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the L8550HQLT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L8550HQLT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the L8550HQLT1G transistor as follows.

Circuit diagram symbol of the L8550HQLT1G transistor

L8550HQLT1G Transistor Specification

Transistor Code L8550HQLT1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 1HD
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 150

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