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KT841E NPN Transistor

The KT841E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT841E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT841E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT841E transistor as follows.

Circuit diagram symbol of the KT841E transistor

KT841E Transistor Specification

Transistor Code KT841E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 800V
Collector-Emitter Voltage (Maximum) VCE 800V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 12
Transition Frequency FT 10MHz
Collector Capacitance CC 300pF

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