KSD5075T NPN Transistor

The KSD5075T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSD5075T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSD5075T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSD5075T transistor as follows.

KSD5075T Transistor Specification

Transistor Code		KSD5075T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3P
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	3.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		8
Transition Frequency	FT	3MHz

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