KSD5070 NPN Transistor

The KSD5070 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSD5070 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSD5070 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSD5070 transistor as follows.

KSD5070 Transistor Specification

Transistor Code		KSD5070
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3P
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		8
Transition Frequency	FT	3MHz

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