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HSBD175 NPN Transistor

The HSBD175 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSBD175 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSBD175 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSBD175 transistor as follows.

Circuit diagram symbol of the HSBD175 transistor

HSBD175 Transistor Specification

Transistor Code HSBD175
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 3MHz

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