HS6012 NPN Transistor

The HS6012 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HS6012 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HS6012 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HS6012 transistor as follows.

HS6012 Transistor Specification

Transistor Code		HS6012
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X55-1
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	240MHz
Collector Capacitance	CC	10pF

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