HMBT5401 PNP Transistor

The HMBT5401 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HMBT5401 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMBT5401 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HMBT5401 transistor as follows.

HMBT5401 Transistor Specification

Transistor Code		HMBT5401
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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