HEPS9102 NPN Transistor

The HEPS9102 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS9102 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS9102 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS9102 transistor as follows.

HEPS9102 Transistor Specification

Transistor Code		HEPS9102
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	70W
Collector-Base Voltage (Maximum)	VCB	60V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		750
Transition Frequency	FT	2MHz

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