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HEPS3033 NPN Transistor

The HEPS3033 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3033 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3033 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3033 transistor as follows.

Circuit diagram symbol of the HEPS3033 transistor

HEPS3033 Transistor Specification

Transistor Code HEPS3033
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO39
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Forward Current Transfer Ratio (hFE Value) 35
Transition Frequency FT 150MHz

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