HBU406H NPN Transistor

The HBU406H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HBU406H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HBU406H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HBU406H transistor as follows.

HBU406H Transistor Specification

Transistor Code		HBU406H
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	10MHz

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