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HBU3150A NPN Transistor

The HBU3150A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HBU3150A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HBU3150A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HBU3150A transistor as follows.

Circuit diagram symbol of the HBU3150A transistor

HBU3150A Transistor Specification

Transistor Code HBU3150A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 1000V
Collector-Emitter Voltage (Maximum) VCE 530V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15

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