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HA21G NPN Transistor

The HA21G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HA21G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HA21G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HA21G transistor as follows.

Circuit diagram symbol of the HA21G transistor

HA21G Transistor Specification

Transistor Code HA21G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO237
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 68
Transition Frequency FT 50MHz
Collector Capacitance CC 1pF

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