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GT2767 NPN Transistor

The GT2767 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT2767 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT2767 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT2767 transistor as follows.

Circuit diagram symbol of the GT2767 transistor

GT2767 Transistor Specification

Transistor Code GT2767
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Germanium(GE)
Package TO5
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 8MHz
Collector Capacitance CC 15pF

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