GSDR10025I NPN Transistor

The GSDR10025I is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSDR10025I transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSDR10025I transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSDR10025I transistor as follows.

GSDR10025I Transistor Specification

Transistor Code		GSDR10025I
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	25MHz

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