GS112E PNP Transistor

The GS112E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GS112E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS112E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GS112E transistor as follows.

GS112E Transistor Specification

Transistor Code		GS112E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO39
Collector Power Dissipation (Maximum)	PC	0.083W
Collector-Base Voltage (Maximum)	VCB	20V
Collector Current (Maximum)	IC	0.21A
Operating Junction Temperature (Maximum)	TJ	90°C
Forward Current Transfer Ratio (hFE Value)		120

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