GES5827A NPN Transistor

The GES5827A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5827A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5827A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5827A transistor as follows.

GES5827A Transistor Specification

Transistor Code		GES5827A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	50MHz
Collector Capacitance	CC	4pF

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