GES5400R PNP Transistor

The GES5400R is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES5400R transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5400R transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES5400R transistor as follows.

GES5400R Transistor Specification

Transistor Code		GES5400R
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	130V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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