GES3900A NPN Transistor

The GES3900A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES3900A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES3900A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES3900A transistor as follows.

GES3900A Transistor Specification

Transistor Code		GES3900A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	18V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	80MHz
Collector Capacitance	CC	12pF

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