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GES3499 NPN Transistor

The GES3499 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES3499 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES3499 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES3499 transistor as follows.

Circuit diagram symbol of the GES3499 transistor

GES3499 Transistor Specification

Transistor Code GES3499
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.625W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 75MHz
Collector Capacitance CC 20pF

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