GES2712 NPN Transistor

The GES2712 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES2712 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES2712 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES2712 transistor as follows.

GES2712 Transistor Specification

Transistor Code		GES2712
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	18V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		76
Collector Capacitance	CC	12pF

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