FTB1151 PNP Transistor

The FTB1151 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the FTB1151 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FTB1151 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the FTB1151 transistor as follows.

FTB1151 Transistor Specification

Transistor Code		FTB1151
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	1.25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		100

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