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FMBS5551 NPN Transistor

The FMBS5551 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FMBS5551 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FMBS5551 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FMBS5551 transistor as follows.

Circuit diagram symbol of the FMBS5551 transistor

FMBS5551 Transistor Specification

Transistor Code FMBS5551
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SSOT-6
Transistor SMD Code 3S1
Collector Power Dissipation (Maximum) PC 0.7W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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More Transistors Datasheets in SSOT-6 Package

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