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FGT8766B NPN Transistor

The FGT8766B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FGT8766B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FGT8766B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FGT8766B transistor as follows.

Circuit diagram symbol of the FGT8766B transistor

FGT8766B Transistor Specification

Transistor Code FGT8766B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 150W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 200°C
Forward Current Transfer Ratio (hFE Value) 100

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