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ESM870 NPN Transistor

The ESM870 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM870 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM870 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM870 transistor as follows.

Circuit diagram symbol of the ESM870 transistor

ESM870 Transistor Specification

Transistor Code ESM870
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 250W
Collector-Base Voltage (Maximum) VCB 850V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 10

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